A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• bonding between nanoparticles and nanorods. To fabricate the photodetector, CuO NPs/ZnO NRs were deposited on a glass substrate initially. Then, silver electrodes with a thickness of 100 nm were directly patterned on the glass substrate by a sputtering process using a shadow mask with 0.3 cm channel

• length and 0.02 cm channel width. Characterizations The crystal structure of the materials was investigated by X-ray diffractometry on a Bruker D8 Advance diffractometer with Cu Kα radiation (λ = 1.5406 Å). An energy-dispersive X-ray spectrometer (FEI iQUANTA FEG-200) was used to determine the chemical

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• simulations. We assumed a finite GNM length between the two contacts. The channel of the photodetector has three GNM supercells along the transport direction (X direction), while in the perpendicular direction the channel length is defined to be infinite. To compare the designed devices with other

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• fundamental barriers: (i) Further miniaturization of the CMOS transistors below 10 nm channel length is technologically extremely demanding and cost-inefficient. (ii) Their digital operation is not sustainable below the scale of the Fermi wavelength, which is typically ca 10 nm in layered semiconductors. (iii

Microfluidics as tool to prepare size-tunable PLGA nanoparticles with high curcumin encapsulation for efficient mucus penetration

• Nashrawan Lababidi,
• Valentin Sigal,
• Aljoscha Koenneke,
• Konrad Schwarzkopf,
• Andreas Manz and
• Marc Schneider

Beilstein J. Nanotechnol. 2019, 10, 2280–2293, doi:10.3762/bjnano.10.220

• total flow rate. Furthermore, the influence of the length of the focus mixing channel on the size was evaluated in order to better understand the nucleation–growth mechanism. Surprisingly, the channel length was revealed to have no effect on particle size for the chosen settings. In addition, curcumin

• PLGA NPs using the nanoprecipitation method. This system offers stable conditions to produce monodisperse particles of small size. At the same time, it offers the possibility to vary some additional factors during preparation, such as channel diameter and channel length [37]. For the successful

• distances after the mixing point. It can be seen at the 0.05 flow rate ratio that for all channel lengths the NP diameter was between 50–60 nm. Also for the other flow rate ratios, no influence of the channel length could be observed (Figure 7); only for the highest flow rate ratio, a difference between the

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• device fabrication and testing Sensor devices were fabricated on a tin-doped indium oxide (ITO) substrate with a channel length of ≈300 µm and width ≈5 mm. The PtSe2 nanosheet powder was dispersed in N-methyl-2-pyrrolidone (NMP) solvent and then drop casted between the channels. The devices were further

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• on NEGF device simulations are presented. NEGF device simulations NEGF simulations were realized considering a 1.7 nm thick undoped Si-NWire MISFET with a channel length of L = 5 nm in a wrap-gate architecture placed between two metallic contacts (Figure 8a). The channel is insulated by a SiO2 layer

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• Figure 1, L is the channel length, tch refers to the channel thickness, Nd is the doping concentration of the channel, and Ls and Ld denote the extension lengths of source and drain, respectively. The accurate modeling of the nanoscale DG-HJ-JL TFET requires taking into account quantum-confinement

• function of the transistor channel length for both the proposed Si1−xGex/Si/Ge DG-HJ-JL TFET design and the conventional Ge-DG-JL TFET structure with tch = 5 nm, xGe = 0.6 and Nd = 1·1019 cm−3. The optimized design provides better scaling capability than the conventional one and exhibits a faster decrease

• of the swing factor as a function of the channel length. This behavior can be explained by the improved electrostatic response offered by the heterochannel. For the completeness of this work, we analyze the improvements of the proposed design compared to conventional TFET devices with regard to the

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• = 225.6 K, q = 2.513. The lines in (c) and (d) are the fits of Equation 6 to the experimental points whose values are listed in Table 2. Summary of the channel length (L), average nanowire diameter (d), threshold voltage (Vth), transconductance (gm), hole mobility (μ) and free hole concentration (p), for

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• technique (Figure 5b). Two-probe I–V measurements were carried out on single crystals with device geometries that typically featured a channel length of 25 µm, a width of 2–4 mm and a thickness of 5–20 µm (Figure 5b). After exploring numerous metals, nearly ohmic contacts (under vacuum) to Ga:GeH were

• glovebox and using an attenuated total internal reflection (ATR) sample geometry. Electrical properties were measured in top-contact device geometry, where metal contacts were first deposited via e-beam deposition using a shadow mask resulting in a 25 µm channel length. The contact metals used for undoped

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

• Sreetama Banerjee,
• Daniel Bülz,
• Danny Reuter,
• Karla Hiller,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

• -TIE) having a channel length of ca. 100 nm fabricated in this work and, for comparison, commercially available pre-structured organic field-effect transistor (OFET) substrates with a channel length of 20 µm were used. The magnitude of the photocurrent as well as the magnetoresistance was found to be

• higher for the HED-TIE devices because of the much smaller channel length of these devices compared to the OFETs. We attribute the observed light-induced negative magnetoresistance in TIPS-pentacene to the presence of electron–hole pairs under illumination as the magnetoresistive effect scales with the

• (78 nm film thickness in [9], compared to ca. 500 nm film thickness in our drop-coated OFETs at the same channel length), because the mobility values determined for our solution-processed OFETs are in the range from 10−2 to 1 cm2·V−1·s−1, which is higher than the mobility values reported for thermally

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• 11 V) for a representative Gr-FET device with channel width W = 100 µm, channel length L = 190 µm (area = W × L = 19 × 103 µm2) and an access region length Lacc = 20 µm, defined as the distance between source (drain) and the channel region. All the output characteristics exhibit a linear (ohmic

• resistance contributions from source to drain. a) Id–Vd characteristics at different back gate bias values and b) Id–Vg transfer characteristic for a representative Gr-FET with channel width W = 100 μm, channel length L = 190 μm and access regions length Lacc = 20 μm. In the insert of b) the leakage current

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• of ID (left axis) and of the transconductance gm (right axis) at VDS = 0.1 V and T = 298 K. The field effect mobility in the linear region, μlin, of the transfer characteristics is typically extracted from the transconductance using the following formula where L and W are the channel length and

Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

• Stephen Connaughton,
• Maria Koleśnik-Gray,
• Richard Hobbs,
• Olan Lotty,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1284–1288, doi:10.3762/bjnano.7.119

• four-point probe configuration [11]. Electrical characterization was carried out at ambient conditions. The geometry of each NW device (diameter size and channel length) was determined by electron microscopy [11][16]. From this the NW resistivity was extracted as function of diameter (Figure 1). Upon

High I_on/I_off current ratio graphene field effect transistor: the role of line defect

• Mohammad Hadi Tajarrod and
• Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

• , the off-current decreases when the channel length is increased. Due to the increase of the band gap in the defected channels, the off-current in ELD-GNRFETs (about 70%) was smaller than that in ideal transistors. The transmission reduction in ELD-GNRFET caused an on-current decrease by 47

• %. Nevertheless, as seen in Figure 3c, the on/off current increased by a factor of 1.30 (30% improvement). Due to ballistic transport, the transconductance remains constant when the channel length is reduced. Although in the defect channel transconductance is reduced because of a smaller transition probability

• = Voff + VDD (VDD = 0.7 V), where Voff = Vgs at Ids = Ioff). Symbols show the exact value, and dashed lines are fitted to data points. Channel length dependence of (a) on-current (b) off current (c) on/off current. The lines are a guide to the eye. The dashed blue line is for ELD-GNRFET and the dashed

Charge carrier mobility and electronic properties of Al(Op)₃: impact of excimer formation

• Andrea Magri,
• Pascal Friederich,
• Bernhard Schäfer,
• Valeria Fattori,
• Xiangnan Sun,
• Timo Strunk,
• Velimir Meded,
• Luis E. Hueso,
• Wolfgang Wenzel and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

• relative to the TFT device with a channel length of 100 μm is shown. The curve clearly outlines a p-type transistor behavior of the device [33][34][35], and the on/off current ratio calculated from this curve is greater than 104. As a result of the electrical characterization of four Al(Op)3-based TFT

• in CH2Cl2 solution (black) and as a thin film on quartz (red). In solution, a mono-exponential decay is observed with a lifetime τ ≈ 0.7 ns, while in the thin film, a multi-exponential decay is observed with an average lifetime τ ≈ 7.1 ns. Transfer curve of the Al(Op)3-based TFT with a channel length

• current (IG) from the transfer characterization of the Al(Op)3-based TFT with a channel length of 100 μm. The source–drain bias, VDS, for this measurement is −70 V. ISD currents are far higher than IG in the high voltage regime, indicating that the mobility calculated from the transfer curves is reliable

Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

• Shawn Sanctis,
• Rudolf C. Hoffmann,
• Sabine Eiben and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2015, 6, 785–791, doi:10.3762/bjnano.6.81

• the FET devices (15 × 15 mm2) consisted of n-doped silicon with a 90 nm layer of SiO2, on which gold electrodes were attached with an intermediate adhesion layer of indium tin oxide. The electrodes possessed an inter-digital structure with a channel width W of 10 mm and a channel length of 20 µm. 13C

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• = h/4e2, rch is the channel resistance per unit length, Rc is the single contact resistance, ρc is the specific contact resistivity, Lc and Lch represent the contact width and the channel length, respectively, d is the diameter of the SWCNT, and Le is the mean free path for carrier scattering (which

• this approach was extended to nanoscale devices, such as CNFETs [24][48]. As shown in Figure 5b, multi-electrodes are defined on the same SWCNT. The overall resistance is measured for CNFETs with different channel lengths. For the CNFET with a short channel length made from a high quality SWCNT and

• nanotube is consistent along the entire length, the contact resistance and the channel resistance can be determined by plotting the overall resistance versus the channel length. The corresponding resistances can be determined from the intercept (2Rc) and the slope (rch) of the curve. Factors influencing

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• in electrical parameters such as conductance, transconductance, threshold voltage and hysteresis gap. The channel length (L) dependence of each of these parameters necessitates the need to include them when interpreting the effect of L on the response to hybridization. Using the definitions of

• variation trend in response to the newly defined parameters. Keywords: biosensor; carbon nanotubes; channel length; field-effect transistor; hybridization; mobility; nucleic acid; Introduction Detection of nucleic acids such as deoxyribonucleic acid (DNA) or ribonucleic acid (RNA) is an important issue in

• of the channel length on hybridization detection. One proposed method to confine hybridization events on the channel surface and to reduce the influence of contacts is the use of long CNTs. Thus the signal response is a consequence of the alteration in the intrinsic electronic property of the SWCNT

An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• the length of the tube and m* denotes the effective mass of the CNT effective mass depending on the tube diameter [39][40]. The number of conduction channels can be written as: where L denotes the channel length. Two major factors contribute to the conductance effect on large channels, enabling it to

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

• Denis E. Presnov,
• Sergey V. Amitonov,
• Pavel A. Krutitskii,
• Valentina V. Kolybasova,
• Igor A. Devyatov,
• Vladimir A. Krupenin and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

• SiNW FET fabricated [8] by traditional methods from silicon-on-insulator (SOI) with a pH sensitivity equal to VLS-grown NW FET [7]. The maximum sensitivity in subthreshold mode is estimated to be on the order of 10−3e/. Results and Discussion In Figure 1 a NW FET with a channel length of 5 μm and a

Conducting composite materials from the biopolymer kappa-carrageenan and carbon nanotubes

• Ali Aldalbahi,
• Jin Chu,
• Peter Feng and
• Marc in het Panhuis

Beilstein J. Nanotechnol. 2012, 3, 415–427, doi:10.3762/bjnano.3.48

• conductivity of films Free-standing films were prepared by evaporative casting and vacuum filtration of KC–CNT dispersions. All films exhibited linear I–V characteristics, i.e., ohmic behaviour (Figure 5a). The total resistance (RT) increased with channel length (Figure 5b), and was found to scale linearly

• dispersions. The lines in (c) and (d) are fits to Equation 1 and Equation 2, respectively. (a) I–V characteristics for KC–CNT (channel length 2 cm) and (b) resistance as a function of length for KC–CNT composite films prepared by evaporative casting and vacuum filtration of KC–CNT dispersions. Numbers 1 and 2

Nanostructured, mesoporous Au/TiO₂ model catalysts – structure, stability and catalytic properties

• Matthias Roos,
• Dominique Böcking,
• Kwabena Offeh Gyimah,
• Gabriela Kucerova,
• Joachim Bansmann,
• Johannes Biskupek,
• Ute Kaiser,
• Nicola Hüsing and
• R. Jürgen Behm

Beilstein J. Nanotechnol. 2011, 2, 593–606, doi:10.3762/bjnano.2.63

• , CO: MKS 1479A, 0–100 sccm). The reaction chamber is connected to the analysis chamber by a quartz capillary with an inner diameter of 3 mm. At the lower end of the capillary, which reaches into the reaction chamber, a small cylindrical flow restrictor (channel length 3 mm, inner diameter 50 µm) is